Dataram DTM68103B Datový list stáhnout pdf

DTM68103B

4GB - 288-Pin 1Rx8 Unbuffered Non- ECC DDR4 DIMM

Features Identification

288-pin JEDEC-compliant DIMM, 133.35 mm wide by 31.25 mm

high

DTM68103B 512Mx64

4G 1Rx8 PC4-2133P-UB0-10

Performance range

Clock / Module Speed / CL-t

RCD

-t

1067 MHz / PC4-2133 / 16-16-16

1067MHz / PC4-2133 / 15-15-15

933 Hz / PC4-1866 / 14-14-14

933 Hz / PC4-1866 / 13-13-13

800 Hz / PC4-1600 / 12-12-12

800 Hz / PC4-1600 / 11-11-11

667 MHz / PC4-1600 / 10-10-10

667 MHz / PC4-1600 / 9-9-9

Description

DTM68103B is an unbuffered 512Mx64

memory module, which conforms to

JEDEC's DDR4-2133, PC4-2133 standard.

The assembly is Single-Rank. The rank is

comprised of eight Micron 512Mx8 DDR4-

2133 SDRAMs. One 2K-bit EEPROM is

used for Serial Presence Detect.

Both output driver strength and input

termination impedance are programmable

to maintain signal integrity on the I/O

signals in a Fly-by topology. A thermal

sensor accurately monitors the DIMM

module and can prevent exceeding the

maximum operating temperature of 95C.

Operating Voltage: VDD/VDDQ = 1.2V (1.14V to 1.26V)

VPP = 2.5V (2.375V to 2.75V)

VDDSPD = 2.25V to 2.75V

I/O Type: 1.2 V signaling

On-board I

C temperature sensor with integrated Serial

Presence-Detect (SPD) EEPROM

Data Transfer Rate: 17.0 Gigabytes/sec

Data Bursts: 8 and burst chop 4 mode

ZQ Calibration for Output Driver and On-Die Termination (ODT)

Programmable ODT / Dynamic ODT during Writes

Programmable CAS Latency: 9, 10, 11, 12, 13, 14, 15 and 16

Bi-directional Differential Data Strobe signals

Per DRAM Addressability is supported

Write CRC is supported at all speed grades

DBI (Data Bus Inversion) is supported(x8 only)

CA parity (Command/Address Parity) mode is supported

Supports ECC error correction and detection

16 internal banks

SDRAM Addressing (Row/Col/BG/BA): 15/10/2/2

Fully RoHS Compliant

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